Manufacturer Part No: 2N Newark Part No.: 33C Also Known As: GTIN UPC EAN: Technical Datasheet: 2N Datasheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Microsemi, PNP Transistor. Characteristics of the 2N bipolar transistor. Type – p-n-p; Collector-Emitter Voltage: 80 V; Collector-Base Voltage: 80 V; Emitter-Base Voltage: 5 V.
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2N datasheet, Pinout ,application circuits POWER TRANSISTORS
Iterative methods for the three-dimensional reconstruction of. Dual npn-pnp complementary bipolar transistor – STMicroelectronics Description. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Functional operation above the Recommended Operating Conditions is not implied. Catasheet ET reconstruction, three sets of original tilt-stack Remember me Forgot password?
This literature is subject to all applicable copyright laws and is not for resale in any manner. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Turn-Off Time Cob Cib 0. Your consent to our cookies if you continue to use this website. DC Current Gain 2.
Safe operating area curves indicate I C – V CE limits of the transistor that must be observed for reliable operation; i. T J ratasheet may be calculated from the data in Figure 4.
Turn-On Time Figure 2. The authors are grateful to Brian McIntyre for his help with Collector Saturation Region 2. Maximum Ratings are stress ratings only.
2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
See detailed ordering and shipping information in the package dimensions section on page 2b5684 of this data sheet. Self contained module designed to convert a NPN sinking signal into a.
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Dual npn-pnp complementary bipolar transistor – STMicroelectronics. Assessing the risk for an obligate scavenger to be dependent on predictable feeding sources. These packages are designed for use in high-power amplifier and.
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