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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
IRF7416 MOSFET. Datasheet pdf. Equivalent
The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.
The SO-8 has been modified through a customized. With these improvements, multiple devices.
IRF Datasheet PDF –
The package is designed for vapor phase. Junction and Storage Temperature Range. Q g Total Gate Charge. Q gs Gate-to-Source Charge.
Q gd Gate-to-Drain “Miller” Charge. C iss Input Capacitance.
C oss Output Capacitance. C rss Reverse Transfer Capacitance.
Source-Drain Ratings and Characteristics. I S Continuous Source Current. Q rr Reverse RecoveryCharge.
International Rectifier Electronic Components Datasheet. View PDF for Mobile.